The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 14, 2024

Filed:

May. 28, 2021
Applicants:

Tower Partners Semiconductor Co., Ltd., Toyama, JP;

Tower Semiconductor Ltd., Migdal Haemek, IL;

Inventor:

Masafumi Tsutsui, Toyama, JP;

Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/148 (2006.01); H01L 21/76 (2006.01); H01L 21/762 (2006.01); H01L 27/146 (2006.01); H04N 25/70 (2023.01);
U.S. Cl.
CPC ...
H01L 27/14818 (2013.01); H01L 21/76 (2013.01); H01L 21/762 (2013.01); H01L 27/146 (2013.01); H01L 27/1463 (2013.01); H04N 25/70 (2023.01);
Abstract

A solid-state imaging device includes a pixel array where pixels are arranged in a matrix. Each of the pixels includes a photoelectric conversion unit configured to generate a signal charge based on incident light, and an element isolation layer having light-shielding properties and surrounding a periphery of the photoelectric conversion unit. The element isolation layers of adjacent ones of the pixels in a row direction and a column direction are isolated from each other. A charge storage layer and a charge trapping layer are provided in each of regions between the element isolation layers of the adjacent ones of the pixels in the row direction and the column direction. The charge storage layer stores the signal charge. The charge trapping layer reduces incidence of light on the charge storage layer.


Find Patent Forward Citations

Loading…