The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 14, 2024

Filed:

Jul. 06, 2021
Applicant:

Innolux Corporation, Miao-Li County, TW;

Inventors:

Kuan-feng Lee, Miao-Li County, TW;

Chandra Lius, Miao-Li County, TW;

Nai-Fang Hsu, Miao-Li County, TW;

Assignee:

INNOLUX CORPORATION, Miao-Li County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 21/02 (2006.01); H01L 29/24 (2006.01); H01L 29/49 (2006.01); H01L 29/51 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1225 (2013.01); H01L 21/02164 (2013.01); H01L 21/02532 (2013.01); H01L 21/02565 (2013.01); H01L 21/02595 (2013.01); H01L 27/1222 (2013.01); H01L 27/1237 (2013.01); H01L 27/1251 (2013.01); H01L 27/1259 (2013.01); H01L 29/24 (2013.01); H01L 29/4908 (2013.01); H01L 29/51 (2013.01); H01L 29/66757 (2013.01); H01L 29/66969 (2013.01); H01L 29/78675 (2013.01); H01L 29/7869 (2013.01); H01L 29/518 (2013.01);
Abstract

A display device having a substrate; a first thin film transistor (TFT) on the substrate, the first TFT having a first active layer, a first gate insulator, and a first gate electrode; a second TFT on the substrate, the second TFT having a second active layer, a second gate insulator and a second gate electrode. The first gate insulator is disposed between the first gate electrode and the first active layer, and the first gate insulator is in contact with the first active layer. The second gate insulator is disposed between the second gate electrode and the second active layer, and the second gate insulator is in contact with the second active layer. The first active layer is a different material than the second active layer, and a hydrogen concentration of the second gate insulator is less than a hydrogen concentration of the first gate insulator.


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