The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2024
Filed:
Nov. 12, 2019
Ferdinand-braun-institut Ggmbh, Leibniz-institut Für Höchstfrequenztechnik, Berlin, DE;
Abstract
A high-frequency power transistor comprises a transistor, at least one capacitor and a housing, which at least partially encloses the transistor and the capacitor. A first port for a high-frequency input and a gate DC voltage supply are connected to a gate contact of the transistor. A second port is connected to a drain contact of the transistor for a high-frequency output and drain DC voltage supply. A third port and fourth port are connected to a source contact of the transistor. All ports lead out of the same housing. The third port is connected via the capacitor to the source contact, and the fourth port is connected via at least one inductive element to the source contact, so that the third port provides a high-frequency ground, and the fourth port provides a floating low-frequency ground and source DC voltage supply.