The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2024
Filed:
Nov. 24, 2021
Nanya Technology Corporation, New Taipei, TW;
Wei-Zhong Li, Taoyuan, TW;
Hsih-Yang Chiu, Taoyuan, TW;
NANYA TECHNOLOGY CORPORATION, New Taipei, TW;
Abstract
A semiconductor structure includes a substrate, first and second transistors, first and second fuses, a contact structure, and a dielectric layer. The substrate has first and second device regions, and a fuse region. The first and second transistors are respectively above the first and second device regions. The first fuse is electrically connected to the first transistor and includes a first fuse active region having first and second portions. The second fuse is electrically connected to the second transistor and includes a second fuse active region having third and fourth portions. The contact structure interconnects the second portion and the third portion, wherein the first portion and the fourth portion are on opposite sides of the contact structure. The dielectric layer is between the contact structure and the fuse region of the substrate.