The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 14, 2024

Filed:

Feb. 24, 2022
Applicant:

Globalfoundries U.s. Inc., Malta, NY (US);

Inventors:

Pirooz Parvarandeh, Los Altos Hills, CA (US);

Periyapatna G. Venkatesh, Fremont, CA (US);

Assignee:

GlobalFoundries U.S. Inc., Malta, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 13/00 (2006.01); H04L 9/32 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0059 (2013.01); G11C 13/004 (2013.01); G11C 13/0069 (2013.01); H04L 9/3278 (2013.01);
Abstract

Circuits that include resistive memory elements and methods of using such circuits to generate a physical unclonable function. The circuit includes a first resistive memory element, a second resistive memory element, a first transistor having a source/drain region connected to the first resistive memory element, and a second transistor having a source/drain region connected to the second resistive memory element. The circuit further includes a first inverter having an input connected to a first node between the first transistor and the first resistive memory element, and a second inverter having an input connected to a second node between the second transistor and the second resistive memory element.


Find Patent Forward Citations

Loading…