The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2024
Filed:
Apr. 15, 2020
Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;
Takanori Matsuzaki, Atsugi, JP;
Tatsuya Onuki, Atsugi, JP;
Yuki Okamoto, Isehara, JP;
Toshiki Hamada, Isehara, JP;
Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;
Abstract
A semiconductor device storing data as a multilevel potential is provided. The semiconductor device includes a memory cell, first and second reference cells, first and second sense amplifiers, and first to third circuits. The first circuit has a function of outputting, to a first wiring and a third wiring, a first potential corresponding to a first signal output from the memory cell. The second circuit has a function of outputting, to a second wiring, a first reference potential corresponding to a second signal output from the first reference cell. The third circuit has a function of outputting, to the fourth wiring, a second reference potential corresponding to a third signal output from the second reference cell when a second switch is in an off state. The first sense amplifier refers to the first potential and the first reference potential and changes potentials of the first wiring and the second wiring. The second sense amplifier refers to the first potential and the second reference potential and changes potentials of the third wiring and the fourth wiring.