The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2024
Filed:
Jul. 28, 2021
Applicant:
Phison Electronics Corp., Miaoli, TW;
Inventor:
Horng-Sheng Yan, Penghu County, TW;
Assignee:
PHISON ELECTRONICS CORP., Miaoli, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 29/00 (2006.01); G06F 11/10 (2006.01); G06F 13/16 (2006.01); G06F 13/42 (2006.01);
U.S. Cl.
CPC ...
G06F 11/1076 (2013.01); G06F 13/1668 (2013.01); G06F 13/4282 (2013.01); G06F 2213/0026 (2013.01);
Abstract
A data rebuilding method, a memory storage apparatus, and a memory control circuit unit are disclosed. The method includes: establishing a connection between the memory storage apparatus and a host system; storing a first data to a memory of the host system via the connection; detecting an error in the first data in the memory; and rebuilding a part of data in the first data in the memory according to the error.
Yan, Horng-Sheng. (2024). Data rebuilding method, memory storage apparatus, and memory control circuit unit (U.S. Patent No. 11983069). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11983069
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