The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 14, 2024

Filed:

Mar. 17, 2023
Applicant:

Vanguard International Semiconductor Corporation, Hsinchu, TW;

Inventor:

Po-Yuan Tang, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 29/00 (2006.01); G06F 11/10 (2006.01);
U.S. Cl.
CPC ...
G06F 11/1068 (2013.01); G06F 2201/82 (2013.01);
Abstract

A memory device and a control method for the memory device are provided. When it is determined that a bit read from a memory cell in a memory cell array is an erroneous bit, the memory device triggers a second reading cycle. During the second reading cycle, if the bit read from the same memory cell is still an erroneous bit, the memory cell is deemed to be a real defective memory cell. At this time, a repairing memory cell is selected from a repairing memory cell array to replace the real defective memory cell. The selected repairing memory cell and the real defective memory cell are coupled to the same word line.


Find Patent Forward Citations

Tang, Po-Yuan. (2024). Memory device and control method for memory device (U.S. Patent No. 11983068). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11983068

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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