The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2024
Filed:
Oct. 30, 2019
Petroceramics S.p.a., Stezzano, IT;
Paolo Vavassori, Stezzano, IT;
Massimiliano Valle, Stezzano, IT;
PETROCERAMICS S.p.A., Stezzano, IT;
Abstract
A chemical vapor infiltration (CVI) method for densifying at least one porous component includes placing the at least one porous component inside a crucible, bringing temperature inside the crucible to a value adapted to densify the porous component to transform it into a densified component, bringing pressure inside the crucible between 0.1 KPa and 25 KPa, once operational temperature and pressure are reached, flowing gas inside the crucible, gas being suitable for densifying the porous component to transform it into a densified component, and keeping an oxidizing environment outside the crucible, the external environment lapping against the crucible. The crucible is provided of at least one material having thermal conductivity greater than 30 W/mK from room temperature to at least 1000° C. selected from: sintered silicon carbide (SiC), silicon-infiltrated silicon carbide (Si—SiC), sintered boron carbide (B4C), silicon-infiltrated boron carbide (Si—B4C), sintered zirconium carbide (ZrC), silicon-infiltrated zirconium carbide (Si—ZrC), a combination of silicon carbide (SiC), boron carbide (B4C) and sintered and/or silicon-infiltrated zirconium carbide (ZrC).