The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2024
Filed:
Apr. 21, 2023
Funai Electric Co., Ltd., Osaka, JP;
David L. Bernard, Lexington, KY (US);
Sean T. Weaver, Florence, KY (US);
FUNAI ELECTRIC CO., LTD., Osaka, JP;
Abstract
A method of generating a microfluidic ejection chip is provided. The method includes creating an opening in a silicon substrate through multiple iterations of a deep reactive ion etching process, forming a passivation layer over any exposed portion of silicon at the opening following each iteration of the deep reactive ion etching of the silicon substrate, and not removing the passivation layer at a conclusion of the etching of the silicon substrate to define a fluid passageway at the opening in the silicon substrate, such that the passivation layer is permanent on the silicon substrate at the opening.