The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 07, 2024

Filed:

Aug. 21, 2020
Applicant:

Nuvoton Technology Corporation, Hsinchu Science Park, TW;

Inventors:

In-Shiang Chiu, Taipei, TW;

Kuang-Chu Chen, Hsinchu, TW;

Peng-Chan Hsiao, Taoyuan, TW;

Han-Ying Liu, Hsinchu, TW;

Assignee:

NUVOTON TECHNOLOGY CORPORATION, Hsinchu Science Park, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 10/17 (2023.01); G01K 7/02 (2021.01); H10N 10/01 (2023.01); H10N 10/851 (2023.01);
U.S. Cl.
CPC ...
H10N 10/17 (2023.02); H10N 10/01 (2023.02); G01K 7/028 (2013.01); H10N 10/851 (2023.02);
Abstract

A semiconductor device includes a substrate. The semiconductor device also includes a semiconductor layer disposed in the substrate. The semiconductor device further includes a first dielectric layer disposed on the semiconductor layer. The semiconductor device includes a second dielectric layer disposed on the first dielectric layer. The semiconductor device also includes a pair of thermopile segments disposed on the second dielectric layer. The first dielectric layer and the second dielectric layer form a chamber.


Find Patent Forward Citations

Chiu, In-Shiang. (2024). Semiconductor devices and methods for forming the same (U.S. Patent No. 11980096). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11980096

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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