The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 07, 2024
Filed:
Mar. 27, 2020
Samsung Display Co., Ltd., Yongin-si, KR;
Keum Hee Lee, Cheonan-si, KR;
Joongeol Kim, Hwaseong-si, KR;
Kap Soo Yoon, Seoul, KR;
Woo Geun Lee, Yongin-si, KR;
Seung-Ha Choi, Hwaseong-si, KR;
Jiyun Hong, Seoul, KR;
Samsung Display Co., Ltd., Yongin-si, KR;
Abstract
A method of manufacturing a thin film transistor includes: forming an active pattern on a substrate; forming an insulating layer and a gate electrode layer on the active pattern in order; forming a photoresist pattern on the gate electrode layer; forming a preliminary gate electrode by wet etching the gate electrode layer using the photoresist pattern; forming an insulating pattern by dry etching the insulating layer using the photoresist pattern and the preliminary gate electrode; and forming a gate electrode by wet etching a side surface of the preliminary gate electrode using the photoresist pattern.