The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 07, 2024

Filed:

Feb. 17, 2023
Applicant:

Qualcomm Incorporated, San Diego, CA (US);

Inventors:

Mohamed Abouzied, La Jolla, CA (US);

Vinod Panikkath, San Diego, CA (US);

Li Liu, San Diego, CA (US);

Chuan Wang, San Diego, CA (US);

Assignee:

QUALCOMM Incorporated, San Diego, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 3/45 (2006.01); H04B 1/40 (2015.01);
U.S. Cl.
CPC ...
H03F 3/45475 (2013.01); H04B 1/40 (2013.01); H03F 2200/294 (2013.01); H03F 2200/451 (2013.01);
Abstract

An aspect relates to an apparatus including a radio frequency (RF) signal power detector. The RF signal power detector includes a first current source configured to generate a first current based on a power level of a first RF signal; a transimpedance amplifier (TIA) configured to generate a first voltage based on the first current, wherein the TIA is coupled between a first upper voltage rail and a lower voltage rail; and a second current source configured to generate a second current related to the first current, wherein the first and second current sources are coupled in series between a second upper voltage rail and the lower voltage rail.


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