The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 07, 2024

Filed:

May. 28, 2019
Applicant:

Sony Corporation, Tokyo, JP;

Inventors:

Hiroshi Nakajima, Tokyo, JP;

Rintaro Koda, Tokyo, JP;

Tatsushi Hamaguchi, Tokyo, JP;

Assignee:

Sony Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/183 (2006.01); H01S 5/042 (2006.01); H01S 5/343 (2006.01);
U.S. Cl.
CPC ...
H01S 5/18338 (2013.01); H01S 5/0425 (2013.01); H01S 5/18361 (2013.01); H01S 5/34333 (2013.01); H01S 5/04253 (2019.08); H01S 5/18341 (2013.01);
Abstract

A surface-emitting semiconductor laser including: an active layer including a nitride semiconductor; a first semiconductor layer of a first electrical conduction type and a second semiconductor layer of a second electrical conduction type that are opposed to each other with the active layer therebetween; and a current confinement layer that is opposed to the active layer with the second semiconductor layer therebetween and has an opening, in which a side surface of the current confinement layer is inclined at at least a portion of a peripheral edge of the opening.


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