The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 07, 2024

Filed:

Jan. 23, 2019
Applicant:

Osram Oled Gmbh, Regensburg, DE;

Inventors:

Tilman Rügheimer, Regensburg, DE;

Hubert Halbritter, Dietfurt, DE;

Assignee:

OSRAM OLED GMBH, Regensburg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/00 (2006.01); H01S 5/02 (2006.01); H01S 5/024 (2006.01); H01S 5/042 (2006.01); H01S 5/183 (2006.01); H01S 5/42 (2006.01);
U.S. Cl.
CPC ...
H01S 5/02461 (2013.01); H01S 5/0207 (2013.01); H01S 5/0217 (2013.01); H01S 5/02469 (2013.01); H01S 5/04253 (2019.08); H01S 5/04254 (2019.08); H01S 5/1833 (2013.01); H01S 5/18377 (2013.01); H01S 5/021 (2013.01); H01S 5/0216 (2013.01); H01S 5/04256 (2019.08); H01S 5/18313 (2013.01); H01S 5/18327 (2013.01); H01S 5/423 (2013.01);
Abstract

Surface-emitting semiconductor laser chip () comprising a carrier (), a layer stack () arranged on the carrier () and having a layer plane (L) extending perpendicularly to the stacking direction (R), a front side contact () and a rear side contact (), in which in operation a predetermined distribution of a current density (I) is achieved by means of current constriction in the layer stack (), wherein in the carrier () an electrical through-connection () is provided, which extends from a bottom surface () of the carrier () facing away from the layer stack () to a surface of the carrier () facing the layer stack (), and the distribution of the current density (I) is significantly influenced by the shape and size of the cross-section of the through-connection () parallel to the layer plane (L) on the surface facing the layer stack.


Find Patent Forward Citations

Loading…