The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 07, 2024
Filed:
Feb. 26, 2020
Mitsubishi Electric Corporation, Tokyo, JP;
Ryota Takemura, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A waveguide photodetector includes a first contact layer of a first conductivity type, a waveguide layer, and a second contact layer of a second conductivity type that are sequentially formed on the semiconductor substrate. The waveguide layer includes a first cladding layer of the first conductivity type disposed on a side of the first contact layer, a second cladding layer of the second conductivity type disposed on a side of the second contact layer, and the core layer disposed between the first cladding layer and the second cladding layer. The core layer includes a light absorption layer and an impurity-doped light absorption layer that has a higher concentration of a p-type impurity than that of the light absorption layer and is disposed on a side of a light incident face.