The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 07, 2024

Filed:

Jun. 27, 2022
Applicant:

Amazing Microelectronic Corp., New Taipei, TW;

Inventors:

Chih-Wei Chen, Zhubei, TW;

Kuan-Yu Lin, New Taipei, TW;

Kun-Hsien Lin, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/87 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/87 (2013.01); H01L 29/0684 (2013.01);
Abstract

A transient voltage suppression device includes at least one P-type lightly-doped structure and at least one electrostatic discharge structure. The electrostatic discharge structure includes an N-type lightly-doped well, an N-type well, a first P-type heavily-doped area, and a first N-type heavily-doped area. The N-type lightly-doped well is formed in the P-type lightly-doped structure. The N-type well is formed in the N-type lightly-doped well. The doping concentration of the N-type lightly-doped well is less than that of the N-type well. The first P-type heavily-doped area is formed in the N-type well. The first N-type heavily-doped area is formed in the P-type lightly-doped structure.


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