The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 07, 2024

Filed:

Oct. 12, 2022
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventors:

Akifumi Gawase, Kuwana, JP;

Atsuko Sakata, Yokkaichi, JP;

Assignee:

Kioxia Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 21/02 (2006.01); H01L 29/24 (2006.01); H01L 29/66 (2006.01); H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H01L 29/78693 (2013.01); H01L 21/02565 (2013.01); H01L 21/02592 (2013.01); H01L 29/247 (2013.01); H01L 29/66969 (2013.01); H01L 29/78642 (2013.01); H10B 12/05 (2023.02); H10B 12/30 (2023.02);
Abstract

Provided is a semiconductor device of the embodiment including: an oxide semiconductor layer; a gate electrode; a first electrode electrically connected to one portion of the oxide semiconductor layer, the first electrode including a first region, second region, a third region, and a fourth region, the first region disposed between the first portion and the second region, the first region disposed between the third region and the fourth region, the first region containing at least one element of In, Zn, Sn or Cd, and oxygen, the second region containing at least one metal element of Ti, Ta, W, or Ru, the third region and the fourth region containing the at least one metal element and oxygen, the third region and the fourth region having an atomic concentration of oxygen higher than that of the second region; and a second electrode electrically connected to another portion of the oxide semiconductor layer.


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