The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 07, 2024

Filed:

Mar. 01, 2022
Applicant:

Sense Photonics, Inc., Durham, NC (US);

Inventor:

Hod Finkelstein, Berkeley, CA (US);

Assignee:

Sense Photonics, Inc., Durham, NC (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); G01S 7/481 (2006.01); G01S 17/08 (2006.01); H01L 31/0232 (2014.01); H01L 31/0236 (2006.01); H01L 31/107 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1463 (2013.01); G01S 7/4816 (2013.01); G01S 17/08 (2013.01); H01L 27/14636 (2013.01); H01L 31/0232 (2013.01); H01L 31/02366 (2013.01); H01L 31/107 (2013.01);
Abstract

A photodetector device includes a semiconductor material layer and at least one photodiode in the semiconductor material layer. The at least one photodiode is configured to be biased beyond a breakdown voltage thereof to generate respective electrical signals responsive to detection of incident photons. The respective electrical signals are independent of an optical power of the incident photons. A textured region is coupled to the semiconductor material layer and includes optical structures positioned to interact with the incident photons in the detection thereof by the at least one photodiode. Two or more photodiodes may define a pixel of the photodetector device, and the optical structures may be configured to direct the incident photons to any of the two or more photodiodes of the pixel.


Find Patent Forward Citations

Loading…