The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 07, 2024
Filed:
Sep. 08, 2021
Kioxia Corporation, Tokyo, JP;
Kenichi Ide, Kuwana Mie, JP;
Kioxia Corporation, Tokyo, JP;
Abstract
A semiconductor manufacturing method includes forming a concave portion in a layer provided above a substrate from a top surface of the layer downwards, the layer including an insulation layer at least partially. The method includes forming a silicon film on an inner surface of the concave portion. The method includes exposing the silicon film to a raw material gas of metal and an inhibitor gas that inhibits growth of the metal at a first temperature, to replace a first portion of the silicon film located in an upper-end side portion of the concave portion with a first conductive film containing the metal. The method includes exposing the silicon film to the raw material gas and the inhibitor gas at a second temperature lower than the first temperature, to replace a second portion of the silicon film with a second conductive film containing the metal.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile