The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 07, 2024
Filed:
Aug. 02, 2019
Applicant:
New Cosmos Electric Co., Ltd., Osaka, JP;
Inventors:
Hirokazu Mitsuhashi, Osaka, JP;
Naganori Dogami, Osaka, JP;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01N 27/12 (2006.01); B81B 3/00 (2006.01); G01N 27/414 (2006.01); G01N 33/00 (2006.01);
U.S. Cl.
CPC ...
G01N 27/129 (2013.01); B81B 3/0035 (2013.01); G01N 27/12 (2013.01); G01N 27/122 (2013.01); G01N 27/414 (2013.01); G01N 33/004 (2013.01); G01N 33/005 (2013.01); B81B 2201/02 (2013.01); B81B 2201/10 (2013.01);
Abstract
The MEMS type semiconductor gas detection element of the invention is a MEMS type semiconductor gas detection elementhaving a MEMS structure, for detecting hydrogen gas, comprising: a substratea gas sensitive portionmainly made of a metal oxide semiconductor and provided to the substratea heating portion 4 for heating the gas sensitive portionan inactive filmhaving hydrogen-permselective and formed outside the gas sensitive portiona protective filmformed outside the inactive filmfor suppressing deterioration of the gas sensitive portion