The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 07, 2024
Filed:
Aug. 01, 2022
Applicant:
Soitec, Bernin, FR;
Inventor:
Bruno Ghyselen, Seyssinet, FR;
Assignee:
SOITEC, Bernin, FR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 29/32 (2006.01); C30B 23/02 (2006.01); C30B 25/18 (2006.01); C30B 29/42 (2006.01); H01L 21/02 (2006.01); H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
C30B 29/32 (2013.01); C30B 23/025 (2013.01); C30B 25/183 (2013.01); C30B 29/42 (2013.01); H01L 21/02381 (2013.01); H01L 21/02488 (2013.01); H01L 21/02546 (2013.01); H01L 21/02598 (2013.01); H01L 21/02645 (2013.01); H01L 21/76254 (2013.01);
Abstract
A process for producing a monocrystalline layer of GaAs material comprises the transfer of a monocrystalline seed layer of SrTiOmaterial to a carrier substrate of silicon material followed by epitaxial growth of a monocrystalline layer of GaAs material.