The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 07, 2024

Filed:

Dec. 20, 2021
Applicant:

Industry-university Cooperation Foundation Hanyang University Erica Campus, Ansan-Si, KR;

Inventors:

Tae Joo Park, Ansan-si, KR;

Ji Won Han, Suwon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/56 (2006.01); C23C 16/34 (2006.01); C23C 16/40 (2006.01); C23C 16/455 (2006.01); H01L 21/02 (2006.01); H01L 21/033 (2006.01); H01L 21/3105 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
C23C 16/56 (2013.01); C23C 16/34 (2013.01); C23C 16/405 (2013.01); C23C 16/45523 (2013.01); C23C 16/45525 (2013.01); C23C 16/45534 (2013.01); H01L 21/02271 (2013.01); H01L 21/0228 (2013.01); H01L 21/0337 (2013.01); H01L 21/02181 (2013.01); H01L 21/02186 (2013.01); H01L 21/31055 (2013.01); H01L 21/31122 (2013.01);
Abstract

A material layer manufacturing method is provided. The material layer manufacturing method may comprise the steps of: preparing a substrate having a base pattern formed thereon; providing a first precursor on the substrate having the base pattern formed thereon, in a state where a first voltage is applied to the base pattern; and providing a second precursor on the substrate having the first precursor provided thereon, in a state where a second voltage is applied to the base pattern, to form, on the substrate having the base pattern formed thereon, a material layer resulting from the reaction of the first precursor with the second precursor.


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