The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 07, 2024

Filed:

Dec. 29, 2020
Applicant:

Bochvar High-technology Research Institute for Inorganic Materials, Moscow, RU;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/32 (2006.01); C04B 41/00 (2006.01); C04B 41/45 (2006.01); C04B 41/50 (2006.01); C04B 41/52 (2006.01); C04B 41/87 (2006.01); C23C 16/01 (2006.01); C23C 16/26 (2006.01); D04C 1/02 (2006.01); D04C 1/12 (2006.01); G21C 3/07 (2006.01);
U.S. Cl.
CPC ...
C23C 16/325 (2013.01); C04B 41/009 (2013.01); C04B 41/4531 (2013.01); C04B 41/5001 (2013.01); C04B 41/5059 (2013.01); C04B 41/522 (2013.01); C04B 41/87 (2013.01); C23C 16/01 (2013.01); C23C 16/26 (2013.01); D04C 1/02 (2013.01); D04C 1/12 (2013.01); G21C 3/07 (2013.01); D10B 2101/16 (2013.01); D10B 2505/02 (2013.01); Y10T 29/49982 (2015.01);
Abstract

The method includes forming an inner monolithic layer from crystals of beta phase stoichiometric silicon carbide on a carbon substrate in the form of a rod by chemical methylsilane vapor deposition in a sealed tubular hot-wall CVD reactor. The method further includes forming a central composite layer over the inner monolithic layer by twisting continuous beta phase stoichiometric silicon carbide fibers into tows, transporting the tows to a braiding machine, and forming a reinforcing thread framework. A pyrocarbon interface coating is built up by chemical methane vapor deposition in a sealed tubular hot-wall CVD reactor. Then, a matrix is formed by chemical methylsilane vapor deposition in the reactor. A protective outer monolithic layer is formed from crystals of beta phase stoichiometric silicon carbide over the central composite layer by chemical methylsilane vapor deposition in a CVD reactor. And then the carbon substrate is removed from the fabricated semi-finished product.


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