The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 07, 2024
Filed:
Jun. 20, 2019
University of Houston System, Houston, TX (US);
Zhifeng Ren, Pearland, TX (US);
Fei Tian, Houston, TX (US);
Gang Chen, Carlisle, MA (US);
Bai Song, Cambridge, MA (US);
Ke Chen, Cambridge, MA (US);
Li Shi, Austin, TX (US);
Xi Chen, Austin, TX (US);
Sean Sullivan, Austin, TX (US);
David Broido, Needham, MA (US);
Navaneetha Krishnan Ravichandran, Chestnut Hill, MA (US);
UNIVERSITY OF HOUSTON SYSTEM, Houston, TX (US);
Abstract
A method for growing bulk boron arsenide (BA) crystals, the method comprising utilizing a seeded chemical vapor transport (CVT) growth mechanism to produce single BAs crystals which are used for further CVT growth, wherein a sparsity of nucleation centers is controlled during the further CVT growth. Also disclosed are bulk BAs crystals produced via the method.