The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11974507 B1

Date of Patent:

Apr. 30, 2024

Filed:

Mar. 28, 2019

Storage element, semiconductor device, magnetic recording array, and method of manufacturing storage element

Applicant:

Tdk Corporation, Tokyo, JP;

Inventors:

Atsushi Tsumita, Tokyo, JP;

Yohei Shiokawa, Tokyo, JP;

Assignee:

TDK CORPORATION, Tokyo, JP;

Attorney:

Oliff PLC

Primary Examiner:

Bo B Jang

Int. Cl.

CPC ...

H10N 52/80 (2023.01); G11C 11/16 (2006.01); H10N 50/10 (2023.01); H10N 52/01 (2023.01); H10B 61/00 (2023.01);

U.S. Cl.

CPC ...

H10N 52/80 (2023.02); H10N 52/01 (2023.02); G11C 11/161 (2013.01); H10B 61/22 (2023.02); H10N 50/10 (2023.02);

Abstract

A storage element includes a first ferromagnetic layer; a second ferromagnetic layer; a nonmagnetic layer interposed between the first ferromagnetic layer and the second ferromagnetic layer in a first direction; a first wiring that extends in a second direction different from the first direction and together with the nonmagnetic layer sandwiches the first ferromagnetic layer in the first direction; and an electrode that together with the nonmagnetic layer sandwiches the second ferromagnetic layer in at least a part in the first direction, wherein the electrode is in contact with at least a part of a lateral side surface of the second ferromagnetic layer.

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