The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 2024
Filed:
Aug. 25, 2021
Applicant:
Lg Display Co., Ltd., Seoul, KR;
Inventors:
Jae Hyun Kim, Gimpo-si, KR;
Jin Chae Jeon, Paju-si, KR;
Sun Young Choi, Seoul, KR;
Mi Jin Jeong, Goyang-si, KR;
Jeoung In Lee, Seoul, KR;
Assignee:
LG Display Co., Ltd., Seoul, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/32 (2006.01); H01L 27/12 (2006.01); H01L 51/56 (2006.01); H10K 59/124 (2023.01); H10K 71/00 (2023.01); H10K 59/12 (2023.01);
U.S. Cl.
CPC ...
H10K 59/124 (2023.02); H01L 27/1225 (2013.01); H01L 27/1248 (2013.01); H10K 71/00 (2023.02); H10K 59/1201 (2023.02);
Abstract
Disclosed is a display device and a method of manufacturing the same having improved reliability. In the display device, at least one of a plurality of dielectric films disposed between an oxide semiconductor layer and a light-emitting device includes a lower region disposed on the oxide semiconductor layer and an upper region disposed on the lower region, the upper region including a trap element configured to trap hydrogen, whereby reliability of a thin film transistor including the oxide semiconductor layer is improved.