The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 30, 2024

Filed:

Mar. 13, 2019
Applicant:

Osram Oled Gmbh, Regensburg, DE;

Inventors:

Jan Marfeld, Regensburg, DE;

André Somers, Obertraubling, DE;

Andreas Löffler, Neutraubling, DE;

Sven Gerhard, Alteglofsheim, DE;

Assignee:

OSRAM OLED GMBH, Regensburg, DE;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01S 5/0234 (2021.01); H01S 5/0237 (2021.01); H01S 5/02375 (2021.01); H01S 5/024 (2006.01); H01S 5/026 (2006.01); H01S 5/042 (2006.01); H01S 5/22 (2006.01); H01S 5/323 (2006.01);
U.S. Cl.
CPC ...
H01S 5/22 (2013.01); H01S 5/0234 (2021.01); H01S 5/0237 (2021.01); H01S 5/02375 (2021.01); H01S 5/02469 (2013.01); H01S 5/026 (2013.01); H01S 5/0422 (2013.01); H01S 5/32341 (2013.01);
Abstract

In an embodiment, the semiconductor laser () comprises a semiconductor layer sequence () in which an active zone () for generating laser radiation (L) is located. Several electrical contact surfaces () serve for external electrical contacting of the semiconductor layer sequence (). Several parallel ridge waveguides () are formed from the semiconductor layer sequence () and configured to guide the laser radiation (L) along a resonator axis, so that there is a separating trench () between adjacent ridge waveguides. At least one electrical feed () serves from at least one of the electrical contact surfaces () to guide the current to at least one of the ridge waveguides (). A distance (A) between the ridge waveguides is at most 50 μm. The ridge waveguides () are electrically controllable individually or in groups independently of one another and/or configured for single-mode operation.


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