The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 30, 2024

Filed:

Mar. 29, 2022
Applicant:

Apple Inc., Cupertino, CA (US);

Inventors:

Jae Y. Park, Newark, CA (US);

Arnaud Laflaquière, Paris, FR;

Christophe Vérove, Grenoble, FR;

Fei Tan, San Jose, CA (US);

Assignee:

APPLE INC., Cupertino, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/183 (2006.01); H01S 5/30 (2006.01); H01S 5/343 (2006.01); H01S 5/42 (2006.01);
U.S. Cl.
CPC ...
H01S 5/18308 (2013.01); H01S 5/18358 (2013.01); H01S 5/18366 (2013.01); H01S 5/18369 (2013.01); H01S 5/3095 (2013.01); H01S 5/34313 (2013.01); H01S 5/426 (2013.01);
Abstract

An optoelectronic device includes a carrier substrate and a lower distributed Bragg-reflector (DBR) stack disposed on an area of the substrate and including alternating first layers. A set of epitaxial layers disposed over the lower DBR includes a quantum well structure. An upper DBR stack disposed over the set of epitaxial layers includes alternating second layers. Electrodes apply an excitation current to the quantum well structure. At least one of the electrodes includes a metal ring disposed at an inner side of at least one of the DBR stacks in proximity to the quantum well structure. One or more metal vias pass through the at least one of the DBR stacks so as to connect the metal ring at the inner side of the at least one of the DBR stacks to an electrical contact on an outer side of the at least one of the DBR stacks.


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