The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 2024
Filed:
Jan. 20, 2023
Tianjin Sanan Optoelectronics Co., Ltd., Tianjin, CN;
ChingYuan Tsai, Tianjin, CN;
Chun-Yi Wu, Tianjin, CN;
Fulong Li, Tianjin, CN;
Duxiang Wang, Tianjin, CN;
Chaoyu Wu, Xiamen, CN;
Wenhao Gao, Tianjin, CN;
Xiaofeng Liu, Tianjin, CN;
Weihuan Li, Tianjin, CN;
Liming Shu, Tianjin, CN;
Chao Liu, Tianjin, CN;
Tianjin Sanan Optoelectronics Co., Ltd., Tianjin, CN;
Abstract
A light emitting device includes an epitaxial structure and first and second electrodes on a side of the epitaxial structure. The epitaxial structure includes a first-type semiconductor layer, an active layer, and a second-type semiconductor layer. The active layer is disposed between the first-type semiconductor layer and the second-type semiconductor layer. The first electrode is disposed on the epitaxial structure to be electrically connected with the first-type semiconductor layer. The second electrode is disposed on the epitaxial structure to be electrically connected with the second-type semiconductor layer. The second electrode is in ohmic contact with a second-type window sublayer of the second-type semiconductor layer.