The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 30, 2024

Filed:

Dec. 30, 2022
Applicant:

Japan Display Inc., Tokyo, JP;

Inventors:

Masashi Tsubuku, Tokyo, JP;

Takanori Tsunashima, Tokyo, JP;

Marina Mochizuki, Tokyo, JP;

Assignee:

JAPAN DISPLAY INC., Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/12 (2006.01); G06F 1/16 (2006.01); H01L 31/101 (2006.01);
U.S. Cl.
CPC ...
H01L 31/125 (2013.01); G06F 1/1605 (2013.01); H01L 31/1016 (2013.01);
Abstract

A photo sensor circuit includes: a photo transistor; a first switching transistor; a second switching transistor; and a capacitance element. The photo transistor includes: a gate connected to a first wiring; a source connected to a second wiring; and a drain. The first switching transistor includes: a gate connected to a third wiring; a source connected to a fourth wiring; and a drain connected to the drain of the photo transistor. The capacitance element includes: a first terminal connected to the drain of the photo transistor; and a second terminal connected to the source of the first switching transistor. The second switching transistor includes: a gate connected to a gate line; a source connected to a signal line; and a drain connected to the first terminal of the capacitance element. The photo transistor, first switching transistor, and second transistor each include an oxide semiconductor layer as a channel layer.


Find Patent Forward Citations

Loading…