The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 2024
Filed:
Dec. 28, 2021
Tongwei Solar (Chengdu) Co., Ltd., Sichuan, CN;
Tongwei Solar (Meishan) Co., Ltd., Sichuan, CN;
Tongwei Solar (Jintang) Co., Ltd., Sichuan, CN;
Tongwei Solar (Hefei) Co., Ltd., Anhui, CN;
Tongwei Solar (Anhui) Co., Ltd., Anhui, CN;
Jinle Wang, Sichuan, CN;
TONGWEI SOLAR (CHENGDU) CO., LTD., Sichuan, CN;
TONGWEI SOLAR (MEISHAN) CO., LTD., Sichuan, CN;
TONGWEI SOLAR (JINTANG) CO., LTD., Sichuan, CN;
TONGWEI SOLAR (HEFEI) CO., LTD., Anhui, CN;
TONGWEI SOLAR (ANHUI) CO., LTD., Anhui, CN;
Abstract
Provided are a HJT cell having high photoelectric conversion efficiency and a method for preparing the same. The HJT cell includes an N-type crystalline silicon wafer. An intrinsic amorphous silicon layer, a SiOlayer, a C-doped SiOlayer, a doped N-type amorphous silicon layer, a TCO conductive layer and an electrode are sequentially disposed on a front surface of the N-type crystalline silicon wafer. An intrinsic amorphous silicon layer, a SiOlayer, a C-doped SiOlayer, a doped P-type amorphous silicon layer, a TCO conductive layer and an electrode are sequentially disposed on a back surface of the N-type crystalline silicon wafer. The doped P-type amorphous silicon layer includes a lightly B-doped amorphous silicon layer and a heavily B-doped amorphous silicon layer.