The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 2024
Filed:
Feb. 08, 2022
Infineon Technologies Bipolar Gmbh & Co. KG, Warstein, DE;
Juergen Schiele, Baesweiler, DE;
Reiner Barthelmess, Soest, DE;
Uwe Kellner-Werdehausen, Leutenbach, DE;
Sebastian Paul Sommer, Castrop-Rauxel, DE;
Infineon Technologies Bipolar GmbH & Co. KG, Warstein, DE;
Abstract
A power semiconductor component for voltage limiting includes a rear-side base zone electrically contacted with a rear-side electrode and a front-side base zone electrically contacted with a front-side electrode. At least one switch-on structure is embedded at least into one of the rear-side base zone and the front-side base zone and is electrically contacted by the electrode contacting the embedding base zone. At least one triggering structure is provided as a breakdown structure of a first type, present between the front-side and rear-side electrodes. At least one further triggering structure is provided as a breakdown structure of a second type, present between the front-side and rear-side electrodes. The front-side and rear-side electrodes are each electrically conductively pressure-contacted by an electrically conductive contact plate at least one of which functions as a heat sink for dissipating heat generated in the semiconductor body.