The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 2024
Filed:
Apr. 01, 2019
Mitsubishi Electric Corporation, Tokyo, JP;
Kota Kimura, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
An IGBT (), a diode (), and a well region () are provided on a semiconductor substrate (). The IGBT () includes a trench gate () provided on the first principal surface of the semiconductor substrate (). The diode () includes a p-type anode layer () provided on the first principal surface of the semiconductor substrate (). The well region () includes a p-type well layer () provided on the first principal surface of the semiconductor substrate (), having an impurity concentration higher than that of the p-type anode layer (), and having a depth larger than that of the trench gate (). A terminal end of the trench gate () is surrounded by the p-type well layer (). The diode () is provided on an outer side of the IGBT () in the semiconductor substrate (). The well region () is provided on an outer side of the diode () in the semiconductor substrate ().
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile