The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 30, 2024

Filed:

Aug. 06, 2021
Applicant:

Microsoft Technology Licensing, Llc, Redmond, WA (US);

Inventors:

Dmitry Pikulin, Vancouver, CA;

Georg Wolfgang Winkler, Santa Barbara, CA (US);

Rafal Maciej Rechcinski, Warsaw, PL;

Dominik André Gresch, Zurich, CH;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66984 (2013.01);
Abstract

Examples described in this disclosure relate to gating a semiconductor layer into a quantum spin Hall insulator state, Certain examples further relate to using quantum spin Hall insulators as topological quantum qubits. Quantum spin Hall systems may rely upon the quantum spin Hall effect by causing a state of a matter to change from a certain phase to an inverted bandgap phase. In one example, the present disclosure relates to a device including a semiconductor layer comprising an active material. The device further includes a gate coupled to the semiconductor layer, where the semiconductor layer is operable in a quantum spin Hall insulator state by using electrons and holes from the active material in response to an application of an electric field to the semiconductor layer via the gate.


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