The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 30, 2024

Filed:

Dec. 09, 2021
Applicant:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Inventors:

Johji Nishio, Machida, JP;

Chiharu Ota, Kawasaki, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/16 (2006.01); H01L 29/04 (2006.01); H01L 29/167 (2006.01); H01L 29/78 (2006.01); H01L 29/861 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1608 (2013.01); H01L 29/045 (2013.01); H01L 29/167 (2013.01); H01L 29/7802 (2013.01); H01L 29/861 (2013.01);
Abstract

According to one embodiment, a semiconductor device includes a silicon carbide member. The silicon carbide member includes an operating region including at least one of a diode or a transistor, and a first element region including at least one element selected from the group consisting of Ar, V, Al and B. The first element region includes a first region and a second region. A first direction from the first region toward the second region is along a [1-100] direction of the silicon carbide member. The operating region is between the first region and the second region in the first direction. The first element region does not include a region overlapping the operating region in a second direction along a [11-20] direction of the silicon carbide member. Or the first element region includes a third region overlapping the operating region in the second direction.


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