The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 2024
Filed:
Dec. 01, 2020
Nissan Motor Co., Ltd., Yokohama, JP;
Renault S.a.s., Boulogne-Billancourt, FR;
Wei Ni, Kanagawa, JP;
Tetsuya Hayashi, Kanagawa, JP;
Keiichiro Numakura, Kanagawa, JP;
Toshiharu Marui, Kanagawa, JP;
Ryouta Tanaka, Kanagawa, JP;
Yuichi Iwasaki, Kanagawa, JP;
NISSAN MOTOR CO., LTD., Yokohama, JP;
RENAULT S.A.S., Boulogne-Billancourt, FR;
Abstract
A semiconductor device includes: a drift region that is arranged on a main surface of a substrate, and has a higher impurity concentration than the substrate; a first well region that is connected to the drift region; and a second well region that is arranged adjacent to the first well region and faces the drift region. The second well region has a higher impurity concentration than the first well region. A distance between the source region that faces the drift region via the first well region and the drift region is greater than a distance between the second well region and the drift region, in a direction parallel to the main surface of the substrate. A depletion layer extending from the second well region reaches the drift region.