The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 2024
Filed:
Jul. 05, 2022
SK Hynix Inc., Gyeonggi-do, KR;
Jae Hee Song, Gyeonggi-do, KR;
Dong Hyun Lee, Gyeonggi-do, KR;
Kyung Woong Park, Gyeonggi-do, KR;
Cheol Hwan Park, Gyeonggi-do, KR;
Ki Vin Im, Gyeonggi-do, KR;
SK hynix Inc., Gyeonggi-do, KR;
Abstract
A semiconductor device includes a lower electrode; a supporter supporting an outer wall of the lower electrode; a dielectric layer formed on the lower electrode and the supporter; an upper electrode on the dielectric layer; a first interfacial layer disposed between the lower electrode and the dielectric layer and selectively formed on a surface of the lower electrode among the lower electrode and the supporter; and a second interfacial layer disposed between the dielectric layer and the upper electrode, wherein the first interfacial layer is a stack of a metal oxide contacting the lower electrode and a metal nitride contacting the dielectric layer.