The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 30, 2024

Filed:

Dec. 24, 2021
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Hyeon Gyu You, Wanju-gun, KR;

In Gyum Kim, Bucheon-si, KR;

Gi Young Yang, Seoul, KR;

Ji Su Yu, Seoul, KR;

Jin Young Lim, Seoul, KR;

Hak Chul Jung, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/118 (2006.01); H01L 27/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11807 (2013.01); H01L 27/0207 (2013.01); H01L 2027/11812 (2013.01); H01L 2027/1182 (2013.01); H01L 2027/11866 (2013.01); H01L 2027/11875 (2013.01); H01L 2027/11881 (2013.01); H01L 2027/11887 (2013.01);
Abstract

An integrated circuit includes a first standard cell including a first first-type transistor, a first second-type transistor, a third second-type transistor, and a third first-type transistor, a second standard cell including a second first-type transistor, a second second-type transistor, a fourth second-type transistor and a fourth first-type transistor, a plurality of wiring layers which are disposed on the first and second standard cells and includes a first wiring layer, a second wiring layer, and a third wiring layer sequentially stacked. A source contact of the first first-type transistor and a source contact of the second first-type transistor are electrically connected through a first power rail of the plurality of wiring layers, and a source contact of the third first-type transistor and a source contact of the fourth first-type transistor are electrically connected through a second power rail of the plurality of wiring layers.


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