The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11973011 B1

Date of Patent:

Apr. 30, 2024

Filed:

Mar. 29, 2021

Semiconductor module

Applicant:

Fuji Electric Co., Ltd., Kawasaki, JP;

Inventors:

Tadahiko Sato, Matsumoto, JP;

Kenichiro Sato, Shiojiri, JP;

Assignee:

FUJI ELECTRIC CO., LTD., Kawasaki, JP;

Attorney:

Rabin & Berdo, P.C.

Primary Examiner:

Marc Anthony Armand

Int. Cl.

CPC ...

H01L 23/495 (2006.01); H01L 23/00 (2006.01); H01L 25/18 (2023.01); H01L 29/16 (2006.01);

U.S. Cl.

CPC ...

H01L 23/49575 (2013.01); H01L 23/49517 (2013.01); H01L 24/48 (2013.01); H01L 25/18 (2013.01); H01L 29/1608 (2013.01); H01L 2224/48245 (2013.01); H01L 2224/4917 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/13091 (2013.01);

Abstract

A semiconductor module, including a metal-oxide-semiconductor field effect transistor (MOSFET) made of a SiC semiconductor material, and an insulated gate bipolar transistor (IGBT) that is made of a Si semiconductor material and is connected in parallel with the MOSFET. The MOSFET having a body diode. The IGBT is a reverse conductive-IGBT (RC-IGBT), and includes a free wheeling diode. A forward voltage of the free wheeling diode is so set that a current in the body diode of the MOSFET, which is connected in parallel with the RC-IGBT, is equal to or below a current value that causes lattice defects to grow in the MOSFET.

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