The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 30, 2024

Filed:

Sep. 23, 2021
Applicant:

Texas Instruments Incorporated, Dallas, TX (US);

Inventors:

Mona M. Eissa, Allen, TX (US);

Corinne Ann Gagnet, Dallas, TX (US);

Christopher Scott Whitesell, Garland, TX (US);

Pushpa Mahalingam, Richardson, TX (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02236 (2013.01); H01L 21/02164 (2013.01); H01L 21/02255 (2013.01);
Abstract

A method of forming an integrated circuit, including first, positioning a semiconductor wafer in a processing chamber; second, exposing portions of the semiconductor wafer, including introducing a first amount of hydrogen into the processing chamber and introducing a first amount of oxygen into the processing chamber; and, third, introducing at least one of a second amount of hydrogen or a second amount of oxygen into the processing chamber, the second amount of hydrogen greater than zero and less than the first amount of hydrogen and the second amount of oxygen greater than zero and less than the first amount of oxygen.


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