The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 2024
Filed:
Mar. 08, 2022
Method and device for reading data in a nonvolatile memory device based on cell counts of two states
Samsung Electronics Co., Ltd., Suwon-si, KR;
Hyojung Jang, Hwaseong-si, KR;
Jinyoung Kim, Seoul, KR;
Sehwan Park, Yongin-si, KR;
Jisang Lee, Iksan-si, KR;
Abstract
In a method of reading data in a nonvolatile memory device including a plurality of memory cells having a plurality of states including a first state and a second state, a first read operation for the first state is performed, and a second read operation for the second state is performed. To perform the first read operation, cell counts for a valley of the first state are obtained by performing a valley cell count operation for the first state, a first read voltage level for the first state is determined based on the cell counts and at least one first reference parameter for the first state, and a first sensing operation for the first state is performed by using the first read voltage level. To perform the second read operation, a second read voltage level for the second state is determined based on the cell counts and at least one second reference parameter for the second state, and a second sensing operation for the second state is performed by using the second read voltage level.