The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 30, 2024

Filed:

Jul. 02, 2020
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Jaehee Choi, Seoul, KR;

Udit Monga, Hwaseong-si, KR;

Ken Machida, Kanagawa, JP;

Uihui Kwon, Hwaseong-si, KR;

Yonghee Park, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 30/3308 (2020.01); G06F 119/04 (2020.01);
U.S. Cl.
CPC ...
G06F 30/3308 (2020.01); G06F 2119/04 (2020.01);
Abstract

A method of estimating aging of an integrated circuit (IC) includes: obtaining a first process design kit (PDK) including a plurality of first device models corresponding to a plurality of devices provided by a process of fabricating the IC; obtaining values of aging parameters of device instances included in a netlist defining the IC, by performing a first circuit simulation based on the netlist and the first PDK; and obtaining aging data of the IC by performing a second circuit simulation based on the values of the aging parameters and the netlist, wherein each of the plurality of first device models includes at least one measurement command to be executed in the first circuit simulation to calculate an aging parameter.


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