The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 30, 2024

Filed:

Nov. 03, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Junyong Park, Suwon-si, KR;

Minseok Kim, Suwon-si, KR;

Jisu Kim, Suwon-si, KR;

Ilhan Park, Suwon-si, KR;

Doohyun Kim, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 3/06 (2006.01);
U.S. Cl.
CPC ...
G06F 3/0613 (2013.01); G06F 3/0629 (2013.01); G06F 3/0679 (2013.01);
Abstract

A memory device for improving the speed of a program operation and an operating method thereof is provided. The memory device includes a memory cell array including a plurality of memory cells, a voltage generator configured to generate voltages for one or more program operations and a verify operation performed on the plurality of memory cells, a control logic configured to perform a control operation on the plurality of memory cells so that a first program and a second program loop are performed, a second program operation being performed based on a compensation voltage level determined based on a result of the first verify operation, and a plurality of bit lines connected to the memory cell array, wherein the first verify operation includes first even sensing and second even sensing on even-numbered bit lines, and first odd sensing and second odd sensing on odd-numbered bit lines.


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