The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 30, 2024

Filed:

Jun. 25, 2019
Applicant:

Hamamatsu Photonics K.k., Hamamatsu, JP;

Inventor:

Shinsuke Suzuki, Hamamatsu, JP;

Assignee:

HAMAMATSU PHOTONICS K.K., Hamamatsu, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 21/95 (2006.01); G01N 21/88 (2006.01); G01R 31/26 (2020.01);
U.S. Cl.
CPC ...
G01N 21/9501 (2013.01); G01N 21/8851 (2013.01); G01R 31/26 (2013.01);
Abstract

A semiconductor device inspection method includes: performing a first inspection irradiation on at least one portion in an area to be inspected; outputting first information indicating presence or absence of a defective portion in an entire of the area to be inspected, based on the first inspection irradiation; when it is determined that a second inspection irradiation is to be performed, performing the inspection irradiation on at least one portion in the area to be inspected of the semiconductor device to which the test signal is being input, the portion of the second inspection irradiation is different from the portion of the first inspection irradiation; and outputting second information indicating presence or absence of a defective portion in the entire of the area to be inspected, based on the second inspection irradiation.


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