The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 2024
Filed:
Jun. 18, 2020
Applicant:
Shoei Chemical Inc., Tokyo, JP;
Inventors:
Ashenafi Damtew Mamuye, Milpitas, CA (US);
Christopher Sunderland, San Jose, CA (US);
Ilan Jen-La Plante, San Jose, CA (US);
Chunming Wang, Milpitas, CA (US);
John J. Curley, San Francisco, CA (US);
Nahyoung Kim, Incheon, KR;
Ravisubhash Tangirala, Fremont, CA (US);
Assignee:
SHOEI CHEMICAL INC., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C09K 11/62 (2006.01); B32B 17/06 (2006.01); B32B 27/18 (2006.01); C08J 5/18 (2006.01); C08K 9/02 (2006.01); C09K 11/02 (2006.01); B29K 509/02 (2006.01); B82Y 20/00 (2011.01); B82Y 40/00 (2011.01);
U.S. Cl.
CPC ...
C09K 11/621 (2013.01); B32B 17/06 (2013.01); B32B 27/18 (2013.01); C08J 5/18 (2013.01); C08K 9/02 (2013.01); C09K 11/02 (2013.01); B29K 2509/02 (2013.01); B32B 2250/03 (2013.01); B32B 2250/40 (2013.01); B32B 2255/10 (2013.01); B32B 2255/205 (2013.01); B32B 2260/025 (2013.01); B32B 2260/046 (2013.01); B32B 2264/105 (2013.01); B32B 2264/107 (2013.01); B32B 2307/202 (2013.01); B32B 2307/42 (2013.01); B32B 2457/202 (2013.01); B32B 2457/206 (2013.01); B82Y 20/00 (2013.01); B82Y 40/00 (2013.01); C08K 2201/003 (2013.01); C08K 2201/011 (2013.01); C09K 2211/18 (2013.01);
Abstract
Disclosed are nanostructures comprising Ag, In, Ga, and S and a shell comprising Ag, Ga and S, wherein the nanostructures have a peak wavelength emission of 480-545 nm and wherein at least about 80% of the emission is band-edge emission. Also disclosed are methods of making the nanostructures.