The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 23, 2024

Filed:

Jul. 28, 2022
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Wanki Kim, Chappaqua, NY (US);

Fabio Carta, Pleasantville, NY (US);

Chung H. Lam, Peekskill, NY (US);

Robert L. Bruce, White Plains, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10N 70/00 (2023.01); H10B 63/00 (2023.01); H10N 70/20 (2023.01);
U.S. Cl.
CPC ...
H10N 70/8265 (2023.02); H10B 63/84 (2023.02); H10N 70/023 (2023.02); H10N 70/026 (2023.02); H10N 70/063 (2023.02); H10N 70/231 (2023.02); H10N 70/841 (2023.02); H10N 70/861 (2023.02); H10N 70/882 (2023.02);
Abstract

A method for fabricating a semiconductor device includes forming air gaps within respective dielectric layer portions to reduce thermal cross-talk between adjacent bits. Each of the dielectric portions is formed on a substrate each adjacent to sidewall liners formed on sidewalls of a phase change memory (PCM) layer. The method further includes forming a pillar including the sidewall liners and the PCM layer, and forming a selector layer on the pillar and the dielectric portions.


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