The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 23, 2024

Filed:

Jul. 20, 2021
Applicant:

Emagin Corporation, Hopewell Junction, NY (US);

Inventor:

James A. Walker, Hilton Head Island, SC (US);

Assignee:

eMagin Corporation, Hopewell Junction, NY (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 16/34 (2006.01); B05C 17/06 (2006.01); B05C 21/00 (2006.01); C23C 14/04 (2006.01); C23C 14/24 (2006.01); C23C 16/56 (2006.01); H10K 71/00 (2023.01); H10K 71/16 (2023.01);
U.S. Cl.
CPC ...
H10K 71/00 (2023.02); B05C 17/06 (2013.01); B05C 21/005 (2013.01); C23C 14/042 (2013.01); C23C 14/24 (2013.01); C23C 16/345 (2013.01); C23C 16/56 (2013.01); H10K 71/166 (2023.02);
Abstract

Shadow masks comprising a multi-layer membrane having a mechanical pre-bias that compensates the effect of gravity on the membrane are disclosed. A shadow mask in accordance with the present disclosure includes a membrane that is patterned with a desired pattern of apertures. The layers of the membrane are selected such that their residual stresses collectively give rise to a stress gradient that is directed normal to the plane of the membrane such that the stress gradient mitigates gravity-induced sag. In some embodiments, the membrane includes a layer pair having internal stresses that are of opposite signs to effect a tendency to bulge outward from the plane of the membrane prior to its release from the substrate. An exemplary membrane includes a layer pair comprising a layer of stoichiometric silicon dioxide that is under residual compressive stress and a layer of stoichiometric silicon nitride that is under residual tensile stress.


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