The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 2024
Filed:
Jan. 17, 2022
Tsinghua University, Beijing, CN;
Hon Hai Precision Industry Co., Ltd., New Taipei, TW;
Gao-Tian Lu, Beijing, CN;
Yang Wei, Beijing, CN;
Shou-Shan Fan, Beijing, CN;
Yue-Gang Zhang, Beijing, CN;
Tsinghua University, Beijing, CN;
HON HAI PRECISION INDUSTRY CO., LTD., New Taipei, TW;
Abstract
A thin film transistor includes a gate electrode, a gate insulating layer, a carbon nanotube structure, a source electrode and a drain electrode. The gate insulating layer is located on the gate electrode. The carbon nanotube structure is located on the gate insulating layer. The source electrode and the drain electrode are arranged at intervals and electrically connected to the carbon nanotube structure respectively. The thin film transistor further includes an interface charge layer, and the interface charge layer is located between the carbon nanotube structure and the gate insulating layer.