The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

H01L 29/417 (2006.01); H01L 29/423 (2006.01); H10B 41/20 (2023.01); H10B 43/20 (2023.01); H10B 43/27 (2023.01); H10B 43/30 (2023.01); H10B 51/20 (2023.01); H10K 19/00 (2023.01);

U.S. Cl.

CPC ...

H10B 43/27 (2023.02); H01L 29/41741 (2013.01); H01L 29/42344 (2013.01); H10B 41/20 (2023.02); H10B 43/20 (2023.02); H10B 43/30 (2023.02); H10B 51/20 (2023.02); H10K 19/201 (2023.02);

Abstract

Three-dimensional (3D) semiconductor memory devices are provided. A 3D semiconductor memory device includes an electrode structure on a substrate. The electrode structure includes gate electrodes stacked on the substrate. The gate electrodes include electrode pad regions. The 3D semiconductor memory device includes a dummy vertical structure penetrating one of the electrode pad regions. The dummy vertical structure includes a dummy vertical semiconductor pattern and a contact pattern extending from a portion of the dummy vertical semiconductor pattern toward the substrate.

Find Patent Forward Citations

Son, Younghwan. (2024). Three-dimensional semiconductor memory devices (U.S. Patent No. 11968836). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11968836

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile